"Compared with the traditional 6-inch substrate, the area of ​​the 8-inch substrate has increased by 78%. Under the same conditions, the number of chips cut out will increase by nearly 90%. This will greatly reduce the application cost of silicon carbide."
The birth of the 8-inch silicon carbide single crystal ingot fully verifies the unique advantages of Zhongyi Chuangxin's silicon carbide semiconductor powder in crystal growth. Zhongyi Chuangxin is the largest silicon carbide semiconductor powder R&D, production and sales company in China. It has internationally advanced powder synthesis furnaces and automated pollution-free crushing technology. Its products have the advantages of large single furnace production capacity, large particle size, high purity, high alpha content and low free carbon, and are more suitable for the growth of thick silicon carbide single crystals.
Silicon carbide semiconductor powder is an important third-generation semiconductor material with huge application potential, but there are not many domestic companies that have mastered the core technology. "The inverter produced by the third-generation semiconductor silicon carbide is applied to the field of new energy vehicles, which can achieve fast charging. A car with a range of 600 kilometers can be fully charged in 10 minutes."